Inzwa yokucindezela kwenjini engu-2CP3-68 1946725 ye-Carter excavator

Indlela yokulungiselela inzwa yokucindezela, ebonakala ngokuhlanganisa lezi zinyathelo ezilandelayo:

I-S1, ihlinzeka nge-wafer enendawo engemuva nendawo yangaphambili; Ukwakha umucu we-piezoresistive kanye nendawo yokuxhumana ene-doped kakhulu endaweni engaphambili ye-wafer; Ukwakha umgodi ojulile wokucindezela ngokufaka indawo engemuva ye-wafer;

I-S2, ihlanganisa ishidi lokusekela ngemuva kwesinkwa esilucwecwana;

I-S3, ikhiqiza izimbobo zomthofu nezintambo zensimbi ohlangothini olungaphambili lwe-wafer, kanye nemichilo ye-piezoresistive ukuze kwakhiwe ibhuloho le-Wheatstone;

I-S4, ifaka futhi yenze isendlalelo sokudlula endaweni engaphambili ye-wafer, kanye nokuvula ingxenye yongqimba lwe-passivation ukwenza indawo yensimbi. 2. Indlela yokukhiqiza yenzwa yokucindezela ngokuya ngesimangalo esingu-1, lapho i-S1 ihlanganisa ngokuqondile izinyathelo ezilandelayo: I-S11: ukunikeza iwafa enendawo engemuva nendawo yangaphambili, nokuchaza ukujiya kwefilimu ezwela ukucindezela ku-wafer; I-S12: Ukufakwa kwe-ion kusetshenziswa endaweni engaphambili ye-wafer, ama-piezoresistive strips akhiqizwa inqubo yokusabalalisa izinga lokushisa eliphezulu, futhi izifunda zokuxhumana zifakwe kakhulu; I-S13: ukubeka nokwenza isendlalelo esivikelayo endaweni engaphambili ye-wafer; I-S14: i-etching futhi yakhe imbobo ejulile yokucindezela ngemuva kwewafa ukuze kwakhe ifilimu ezwela ukucindezela. 3. Indlela yokukhiqiza yenzwa yokucindezela ngokusho kwesimangalo esingu-1, lapho i-wafer i-SOI.

Ngo-1962, uTufte et al. yakha inzwa yokucindezela kwe-piezoresistive enemicu ye-silicon piezoresistive ehlakazekile kanye nesakhiwo sefilimu ye-silicon okokuqala ngqa, futhi yaqala ucwaningo ngenzwa yokucindezela kwe-piezoresistive. Ngasekupheleni kwawo-1960 nasekuqaleni kwawo-1970, ukuvela kobuchwepheshe obuthathu, okungukuthi, ubuchwepheshe be-silicon anisotropic etching, ubuchwepheshe bokufakelwa kwe-ion kanye nobuchwepheshe bokuhlanganiswa kwe-anodic, kwaletha izinguquko ezinkulu kunzwa yokucindezela, eyadlala indima ebalulekile ekuthuthukiseni ukusebenza kwenzwa yokucindezela. . Kusukela ngawo-1980, ngokuthuthuka okuqhubekayo kobuchwepheshe be-micromachining, obufana ne-anisotropic etching, i-lithography, i-diffusion doping, ukufakwa kwe-ion, ukubopha kanye nokunamathela, ubukhulu benzwa yokucindezela buyehliswa ngokuqhubekayo, ukuzwela kuye kwathuthukiswa, futhi okukhiphayo kuphezulu futhi ukusebenza kuhle kakhulu. Ngesikhathi esifanayo, ukuthuthukiswa kanye nokusetshenziswa kobuchwepheshe obusha be-micromachining kwenza ukushuba kwefilimu yenzwa yokucindezela kulawulwe ngokunembile.