Inzwa yokucindezela ye-semiconductor evame ukusetshenziswa isebenzisa i-N-type silicon wafer njenge-substrate. Okokuqala, isicwecwana se-silicon senziwa sibe yingxenye ethwala ukucindezeleka nge-geometry ethile. Engxenyeni ethwala ukucindezeleka yesinkwa se-silicon, izimelambisi ezine zohlobo lwe-P zenziwa ngezindlela ezihlukene zekristalu, bese kwakhiwa ibhuloho le-Wheatstone elinezingalo ezine ngalezi zinto ezine eziphikisayo. Ngaphansi kwesenzo samandla angaphandle, izinguquko zamanani okumelana ziba izimpawu zikagesi. Leli bhuloho le-wheatstone elinomphumela wokucindezela inhliziyo yenzwa yokucindezela, ngokuvamile ebizwa ngokuthi ibhuloho le-piezoresistive (njengoba kuboniswe kuMfanekiso 1). Izici zebhuloho le-piezoresistive zimi kanje: ① amanani okumelana nezingalo ezine zebhuloho ayalingana (wonke u-r0); ② Umthelela we-piezoresistive wezingalo eziseduze zebhuloho uyalingana ngenani futhi okuphambene ngophawu; ③ I-coefficient yokushisa yokumelana yezingalo ezine zebhuloho iyafana, futhi zihlala zisezingeni elifanayo. Emkhiwaneni. I-1, i-R0 inani lokumelana ngaphandle kokucindezeleka ekamelweni lokushisa; I-RT iwushintsho olubangelwa i-coefficient yokushisa yokumelana (α) lapho izinga lokushisa lishintsha; U-Υ Rδ ukuguqulwa kokumelana okubangelwa ubunzima (ε); I-voltage ephumayo yebhuloho ingu-u=I0 Δ Rδ=I0RGδ (ibhuloho lomthombo wamanje eliqhubekayo).

Lapho i-I0 ingumthombo wamanje wamanje futhi u-e ungumthombo we-voltage oqhubekayo. I-voltage ephumayo yebhuloho le-piezoresistive ilingana ngokuqondile ne-strain (ε) futhi ayihlanganise lutho ne-RT ebangelwa i-coefficient yezinga lokushisa lokumelana, okunciphisa kakhulu ukukhukhuleka kwenzwa. Inzwa yomfutho we-semiconductor esetshenziswa kakhulu iyinzwa yokubona umfutho wamanzi. Isakhiwo sayo esiyinhloko i-capsule eyenziwe nge-silicon ye-monocrystalline (njengoba kuboniswe kuMfanekiso 2). I-diaphragm yenziwa inkomishi, futhi phansi kwendebe ingxenye ephethe amandla angaphandle, futhi ibhuloho lokucindezela lenziwa phansi kwendebe. I-pedestal yeringi yenziwe nge-silicon single crystal material, bese i-diaphragm iboshelwa esisekelweni. Lolu hlobo lwenzwa yokucindezela lunezinzuzo zokuzwela okuphezulu, ivolumu encane kanye nokuqina, futhi lusetshenziswe kabanzi ekundizeni, ukuzulazula emkhathini, amathuluzi azenzakalelayo namathuluzi ezokwelapha.