Inzwa yengcindezi ephezulu YN52S00027P1 ifanele SK200-6 excavator of Shengang

◆ Ngezinto ezisetshenziswa kuma-valve omfutho we-ultra-high, ukwelashwa kokushisa nokuqina kwendawo kuvame ukusetshenziselwa ukuthuthukisa ukumelana nokukhishwa kwe-extrusion nokumelana nokuguguleka.

1, ukwelashwa vacuum ukushisa

Ukwelashwa kokushisa kwe-vacuum kubhekisela kwinqubo yokwelapha ukushisa lapho ucezu lokusebenza lufakwa ku-vacuum. Ukwelashwa kokushisa kwe-vacuum akukhiqizi i-oxidation, i-decarburization nokunye ukugqwala ngesikhathi sokushisa, kodwa futhi kunomsebenzi wokuhlanza ubuso, ukwehlisa nokukhipha amafutha. I-hydrogen, i-nitrogen ne-oksijini emuncwa izinto ngesikhathi sokuncibilikiswa ingasuswa endaweni engenalutho, futhi ikhwalithi nokusebenza kwempahla kungathuthukiswa. Isibonelo, ngemva kokwelashwa kokushisa kwe-vacuum ye-valve yenaliti yokucindezela kwe-ultra-high eyenziwe nge-W18Cr4V, ukuzimisela komthelela we-valve yenaliti kukhuphuka ngokuphumelelayo, futhi ngesikhathi esifanayo, izakhiwo zemishini nempilo yesevisi iyathuthukiswa.

2. Ukwelashwa kokuqinisa ubuso

Ukuze kuthuthukiswe ukusebenza kwezingxenye, ngaphezu kokushintsha izinto ezibonakalayo, izindlela zokwelashwa eziqiniswa ngaphezulu zamukelwa. Okufana nokucisha indawo (ukushisa ilangabi, ukucisha imvamisa ephezulu naphakathi nendawo, ukucisha indawo yokushisa kagesi, ukucisha indawo yokushisa ye-electrolyte, ukucima i-laser electron beam heat surface quenching, njll.), i-carburizing, i-nitriding, i-cyaniding, i-boronizing (indlela ye-TD), ukuqinisa i-laser, i-chemical vapor deposition (indlela ye-CVD), i-vapor deposition ebonakalayo (indlela ye-PVD), i-plasma chemical vapor deposition (indlela ye-PCVD) isifutho se-plasma, njll.

I-Physical vapor deposition (indlela ye-PVD)

Ku-vacuum, izindlela ezibonakalayo ezifana nokuhwamuka, i-ion plating kanye ne-sputtering zisetshenziselwa ukukhiqiza ama-ion ensimbi. Lawa ma-ion ensimbi afakwa phezu kwendawo yokusebenza ukuze akhe i-coating yensimbi, noma asabelane ne-reactor ukuze akhe ukunamathela okuhlanganisiwe. Le nqubo yokwelapha ibizwa ngokuthi i- physical vapor deposition, noma i-PVD ngamafuphi. Le ndlela inezinzuzo zokushisa okuphansi kwe-deposition, izinga lokushisa lokwelashwa elingu-400 ~ 600℃, ukuguqulwa okuncane kanye nethonya elincane esakhiweni se-matrix kanye nezakhiwo zezingxenye. Ungqimba lwe-TiN lwafakwa kuvalvu yenaliti eyenziwe nge-W18Cr4V ngendlela ye-PVD. Ungqimba lwe-TiN lunokuqina okuphezulu kakhulu (2500～3000HV) nokumelana nokugqokwa okuphezulu, okuthuthukisa ukumelana nokugqwala kwe-valve, akugqwali ku-dilute hydrochloric acid, i-sulfuric acid ne-nitric acid, futhi ingagcina indawo ekhanyayo. Ngemva kokwelashwa kwe-PVD, ukugqoka kunokunemba okuhle. Ingagaywa futhi ipholishwe, futhi ukuhwaqa kwayo ebusweni kungu-Ra0.8µm, okungafika ku-0.01µm ngemva kokupholishwa.